3mm InGaAS Photodiode (TO package)

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RSPD703 - 3mm InGaAS Photodiode (TO package)

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This serial products adopt InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ75µm、φ300µm、φ500µm、φ1mm、φ2mm、φ3mm respectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.

If you need further more information ,please contact Sales@oelabs.com.

Features:

Self-designed highly reliable seed laser
High Response within 1.0～1.65µm
Low Dark Current
Planar Structure
Broad Spectral Response Range (0.65～1.65µm)
Broad Dynamic Range
High Reliability

Application:

Fluorescence spectroscopy
Optical Measurement of near infrared band
Optical power Detection
Optical Fiber Waste Measurement
Spectral Measurement
* Weak Light Measurement

Specification

photo-sensitive area(µm)		φ75µm	φ300µm	φ500µm	φ1mm	φ2mm	φ3mm
Packaging form (see Ordering Information)		TO
Spectral Response Range (µm)	Normal Spectral Response Range	1.0～1.65	1.0～1.65	1.0～1.65	1.0～1.65	1.0～1.65	1.0～1.65
	Broad Spectral Response Range	0.65～1.65	0.65～1.65	0.65～1.65	0.65～1.65	0.65～1.65	0.65～1.65
Response A/W(0V)	850nm	≥0.20
	1310nm	≥0.75
	1550nm	≥0.80
Linear Range dBm(0V)	-	-70-+3	-70-+10
	-	-55-+25	-55-+25
	-	-40-+30	-40-+30
Capacitance pF(-5V)		≤1	≤12	≤20	≤150	≤600	≤1200
Dark Current nA(-5V)		≤1	≤5	≤10	≤30	≤100	≤200
Operating Voltage (V)		0～-10
Linearity (dB)		-	-	-	±0.15	±0.15	±0.15
Splicing Deviation (dB)		±0.1	±0.1	±0.1	-	-	-
Splicing life (time)		105	105	105	-	-	-
Highest Unsaturated Power (dBm)		-	-	-	> +3	> +3	> +3
Absolute Maximµm Ratings						unit
Reverse Voltage Vr		25				V
Operating Temperature To		-40～+85				℃
Storage Temperature Tstg		-40～+85				℃
Optical Current		10				mA
Forward Current		10				mA
Power Waste		100				mW
Jointing Condition		260℃, 10S