• PIN Field-Effect Transistor
  • PIN Field-Effect Transistor

PIN Field-Effect Transistor

No.PINFET-XX

Product Introduction

       The PIN-FET (P-Intrinsic-N Field-Effect Transistor) is the optical signal receiving part of fiber optic gyros, and performs function of photo-electric conversion and signal amplification. It is crucial for ensuring high sensitivity, low noise, and long life of FOGs. Standard 14-pin, 8-pin or 6-pin structure is used for compacted hermetic package.

Product Features

  • Lownoise, high linearity
  • Bandwidth can be adjusted for different responsivity
  • Excellent consistency and high reliability



  • PIN Field-Effect Transistor
  • Description

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Product Specifications

Parameter

PIN-FET for high power incident

PIN-FET for Low power incident 

Wavelength Band

1290 ~ 1560nm

Linear Responsibility(V/μW)

0.009 

0.045

0.09 

0.18

0.18

0.36

0.72

1.08

Linear Maximum Optical Power(μW)

320

64

32

16

16

8

4

2

Linear Minimum Optical Power(μW)

2

0.4

0.2

0.1

0.1

0.05

0.03

0.02

Linearity(%)

±3

Trans-Impedance(KΩ)

10

50

100

200

200

400

800

1200

3dB Bandwidth(MHz)

4~10 / >10

4~10

Root-Mean-Square (RMS) Voltage(V)

≤0.5

Package(mm)

6pin:10.66×7.4×4.5(type G)  /  8pin:13.5×12.6×4.67(type S)  13.2*7.4*4.95(type F)/ 14pin:20.8×12.7×4.57(Type D)

Tail Fiber

SM, Ø125μm or Ø80μm, L=1m

Working Temperature(℃)

-45~+70

Storage Temperature(℃)

-55~+85

 

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